Mechanism of nucleation and growth of cubic boron nitride thin films
نویسندگان
چکیده
منابع مشابه
Infrared ellipsometry on hexagonal and cubic boron nitride thin films
Infrared ellipsometry on hexagonal and cubic boron nitride thin films" (1997).
متن کاملField emission mechanism from nanocrystalline cubic boron nitride films
An electron-emission theoretical model integrating the change in the grain size of nanocrystalline cubic boron nitride (c-BN) thin films was established. To understand better the essence of field emission, an accurate numerical scheme, the transfer matrix method, that can be used to compute the tunneling coefficients of the actual surface barrier, was also adopted. The present results show that...
متن کاملarchitecture and engineering of nanoscale sculptured thin films and determination of their properties
چکیده ندارد.
15 صفحه اولIslanding and strain-induced shifts in the infrared absorption peaks of cubic boron nitride thin films
Experimental and theoretical investigations of the infrared-active, polarization-dependent phonon frequencies of cubic boron nitride films have been performed in light of recent claims that large frequency shifts during initial nucleation are the result of strain caused by highly nonequilibrium growth conditions. We show that the formation of small, separate grains of cubic boron nitride during...
متن کاملGrowth of adhesive cubic phase boron nitride films without argon ion bombardment
Previously, in situ bombardment of massive ions (Ar, Kr, etc.) was considered to be necessary for the formation of c-BN films. Because of the accumulated stress, bombardment of massive ions has led to the formation of c-BN films with poor adhesion. Here we show that c-BN films can be grown without involving bombardment of massive ions. This is achieved by using plasma-assisted pulsed-laser depo...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Science and Technology of Advanced Materials
سال: 2000
ISSN: 1468-6996,1878-5514
DOI: 10.1016/s1468-6996(01)00004-3